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TIP142 NPN Complementary Power Darlington Transistor

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About this product

Overview

  • Monolithic Darlington configuration
  • Integrated antiparallel collector-emitter diode
  • Linear and switching industrial equipment

Product overview

• Monolithic Darlington configuration
• Integrated antiparallel collector-emitter diode
• Linear and switching industrial equipment

Transister PDF Document >>

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Specification

Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 10 A
ICM Collector peak current 20 A
IB Base current 0.5 A
PTOT Total dissipation at Tcase = 25 °C 125 W
TSTG Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C

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